Protecting silicon germanium sidewall with silicon for strained silicon/silicon mosfets

US7498602B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Huilong Zhu · Poughkeepsie, US
• Bruce B. Doris · Brewster, US
• Dan M. Mocuta · Herent, BE

Key dates

• Filing date: Apr 6, 2006
• Grant date: Mar 3, 2009
• Expiry date: Feb 20, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/791

Abstract

Raised Si/SiGe source and drain regions include epitaxially grown silicon on SiGe sidewalls. The epi silicon prevents adverse effects of Ge during silicidation, including Ge out diffusion and silicide line breakage. The Si also increases the active area.