Programmable matrix array with chalcogenide material
US7499315B2 · kind B2 · utility
33Cited by
1References
108Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2005 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Jan 23, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A chalcongenide material is proposed for programming the cross-connect transistor coupling interconnect lines of an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer in series with the select device or a phase change material. The matrix array may be used in a programmable logic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.