Semiconductor device with dielectric structure and method for fabricating the same
US7501320B2 · kind B2 · utility
5Cited by
5References
29Claims
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Key dates
| Filing date | Nov 23, 2005 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Jul 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A semiconductor device with a dielectric structure and a method for fabricating the same are provided. A capacitor in the semiconductor device includes: a bottom electrode formed on a substrate; a first dielectric layer made of titanium dioxide (TiO2) in rutile phase and formed on the bottom electrode; and an upper electrode formed on the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.