Phase change materials and associated memory devices
US7501648B2 · kind B2 · utility
20Cited by
11References
35Claims
0Family size
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Key dates
| Filing date | Aug 16, 2006 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Sep 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.