Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography
US7504185B2 · kind B2 · utility
4Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Oct 3, 2005 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Mar 13, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing, by ion beam sputtering, a multilayer reflective coating of a reflective mask blank for EUV lithography on a substrate having a concave defect formed thereon, characterized in that the method comprises carrying out ion beam sputtering so that an absolute value of an angle α formed between a normal line of a substrate and sputtered particles landing on the substrate is maintained so as to satisfy the formula of 35°≦α≦80° while rotating the substrate about a central axis thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.