Semiconductor device and mask pattern
US7504680B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 18, 2005 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Sep 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 perovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a sidewall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.