Systems involving spin-transfer magnetic random access memory
US7505308B1 · kind B1 · utility
6Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2008 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | May 9, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An exemplary magnetic random access memory system comprising, a spin-current generating portion including, a ferromagnetic film layer, and a conductance layer, a first write portion in electrical contact with the ferromagnetic film including, a selection device, and a first read portion in electrical contact with the conductance layer including, a free layer magnet, a read non-magnetic layer, and a reference layer, a second write portion in electrical contact with the ferromagnetic film, and a second read portion in electrical contact with the conductance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.