Programming memory devices
US7505323B2 · kind B2 · utility
7Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2008 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Feb 5, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.