Silicon based optically degraded arc for lithographic patterning
US7507521B2 · kind B2 · utility
1Cited by
25References
15Claims
0Family size
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Key dates
| Filing date | Aug 9, 2004 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Dec 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optically tuned SLAM (Sacrificial Light-Absorbing Material) may be used in a via-first dual damascene patterning process to facilitate removal of the SLAM. The monomers used to produce the optically tuned SLAM may be modified to place an optically sensitive structure in the backbone of the SLAM polymer. The wafer may be exposed to a wavelength to which the SLAM is tuned prior to etching and/or ashing steps to degrade the optically tuned SLAM and facilitate removal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.