IGBT with amorphous silicon transparent collector

US7507608B2 · kind B2 · utility

Assignee

• International Rectifier Corporation · US

Inventors

• Richard Francis · Manhattan Beach, US
• Chiu Ng · El Segundo, US
• Hamilton Lu · Los Angeles, US
• Ranadeep Dutta · Del Mar, US

Key dates

• Filing date: Dec 8, 2005
• Grant date: Mar 24, 2009
• Expiry date: Mar 10, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.