Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatment
US7507634B2 · kind B2 · utility
19Cited by
10References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 19, 2007 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Jun 19, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12097
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.