Film formation method and apparatus for semiconductor process
US7507676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2007 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Jan 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.