RF power transistor device with high performance shunt capacitor and method thereof
US7508021B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2007 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Jun 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated shunt capacitor comprises a bottom plate (86,88), a capacitor dielectric (92) overlying a portion of the bottom plate, a top plate (62) overlying the capacitor dielectric, a shield (74) overlying a portion of the top plate (62); and a metallization feature (70) disposed about and isolated from at least two sides of the top plate (62), the metallization feature (70) for coupling the bottom plate (86,88) to the shield (74). In one embodiment, an RF power transistor has an impedance matching network including an integrated shunt capacitor as described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.