High voltage device with low on-resistance
US7508032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2007 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Apr 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.