Inventor · Ventura, CA, US

Ting Li

22Patents
11h-index
24Co-inventors
75Inventor score

Filing activity: Jul 23, 2001 → Jan 26, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6444551B1 N-type buried layer drive-in recipe to reduce pits over buried antimony layer Electricity 123 Expired
US6972438B2 Light emitting diode with porous SiC substrate and method for fabricating Electricity 58 Expired
US7915629B2 Composite high reflectivity layer Electricity 37 Active
US8034647B2 LED with substrate modifications for enhanced light extraction and method of making same Electricity 33 Active
US8017963B2 Light emitting diode with a dielectric mirror having a lateral configuration Electricity 31 Active
US7932106B2 Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming Electricity 23 Active
US8680556B2 Composite high reflectivity layer Electricity 19 Active
US7534633B2 LED with substrate modifications for enhanced light extraction and method of making same Electricity 16 Expired
US8710536B2 Composite high reflectivity layer Electricity 15 Active
US8598609B2 Composite high reflectivity layer Electricity 15 Active
US9362459B2 High reflectivity mirrors and method for making same Electricity 14 Active
US7508032B2 High voltage device with low on-resistance Electricity 10 Active
US8617909B2 LED with substrate modifications for enhanced light extraction and method of making same Electricity 4 Active
US8507924B2 Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming Electricity 3 Active
US8384115B2 Bond pad design for enhancing light extraction from LED chips Electricity 1 Active
US8759868B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices Electricity 0 Active
US7893490B2 HVNMOS structure for reducing on-resistance and preventing BJT triggering Electricity 0 Active
US8089090B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices Electricity 0 Active
US10043942B2 Vertical multi-junction light emitting diode Electricity 0 Active
US12368074B2 Manufacturing method of semiconductor structure comprising a gap and semiconductor structure comprising a gap Electricity 0 Active
US8686460B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices General 0 Revoked
US8044425B2 Ultra-thin ohmic contacts for p-type nitride light emitting devices General 0 Revoked

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.