Negative differential resistance diode and SRAM utilizing such device
US7508050B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2006 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Mar 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
Abstract
A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium region and forming a germanium pn junction diode. A first gate electrode overlies the p-type germanium region, is electrically coupled to the n-type germanium region, and is configured for coupling to a first electrical potential. A second gate electrode overlies the n-type germanium region and is configured for coupling to a second electrical potential. A third electrode is electrically coupled to the p-type germanium region and may be coupled to the second gate electrode. A small SRAM cell uses two such NDR diodes with a single pass transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.