Multi-layered dielectric film of microelectronic device and method of manufacturing the same
US7508649B2 · kind B2 · utility
3Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2006 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Dec 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.