Sense amplifier for low-supply-voltage nonvolatile memory cells
US7508716B2 · kind B2 · utility
4Cited by
11References
36Claims
0Family size
Inventors
Key dates
| Filing date | Feb 12, 2004 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Feb 12, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier for nonvolatile memory cells includes a reference cell, a first load, connected to the reference cell, and a second load, connectable to a nonvolatile memory cell, both the first load and the second load having controllable resistance; a control circuit of the first load and of the second load supplies the first load and the second load with a control voltage irrespective of an operating voltage between a first conduction terminal and a second conduction terminal of the first load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.