Spacer T-gate structure for CoSi2 extendibility
US7510922B2 · kind B2 · utility
4Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Apr 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process and apparatus provide a T-shaped structure (84) formed from a polysilicon structure (10) and polysilicon spacers (80, 82) and having a narrower bottom dimension (e.g., at or below 40 nm) and a larger top critical dimension (e.g., at or above 40 nm) so that a silicide may be formed from a first material (such as CoSi2) in at least the upper region (100) of the T-shaped structure (84) without incurring the increased resistance caused by agglomeration and voiding that can occur with certain silicides at the smaller critical dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.