Method for making memory cell device
US7510929B2 · kind B2 · utility
7Cited by
115References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 18, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Aug 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A memory cell device, including a memory material element switchable between electrical property states by the application of energy, includes depositing an electrical conductor layer, depositing dielectric material layers and etching to create a first electrode and voids. A memory material is applied into a void to create a memory material element in contact with the first electrode. A second electrode is created to contact the memory material element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.