Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
US7510976B2 · kind B2 · utility
2Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | May 16, 2006 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | May 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etch process for successively different layers, including an anti-reflection coating (ARC), an amorphous carbon layer (ACL) and a dielectric layer, with successively different etch chemistries is performed in a single plasma reactor chamber. A first transition step is performed after etching the ARC by replacing the fluorine-containing process gas used in the ARC etch step with an inert species process gas. A flush step is performed after etching the ACL by replacing the hydrogen-containing process gas used in the ACL etch step with argon gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.