Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
US7510982B1 · kind B1 · utility
42Cited by
78References
13Claims
0Family size
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Key dates
| Filing date | Jun 6, 2005 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Apr 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Porous dielectric layers are produced by embedding and removing nanoparticles in composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.