Nickel alloy silicide including indium and a method of manufacture therefor
US7511350B2 · kind B2 · utility
17Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2008 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jan 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.