Well for CMOS imager and method of formation

US7511354B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Howard E. Rhodes · Boise, US
• Inna Patrick · Boise, US
• Richard A. Mauritzson · Meridian, US

Key dates

• Filing date: Dec 11, 2006
• Grant date: Mar 31, 2009
• Expiry date: Jan 1, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/014

Abstract

A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.