Patent · US Active

Sub-resolution assist feature to improve symmetry for contact hole lithography

US7512928B2 · kind B2 · utility

9Cited by

5References

7Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Scott Jessen · Allen, US
Mark Terry · Allen, US
Robert Soper · Plano, US

Key dates

Filing date	Aug 12, 2005
Grant date	Mar 31, 2009
Priority date	—
Expiry date	Apr 6, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of making a mask design having optical proximity correction features is provided. The method can include obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate. The method can also comprise generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate and controlling the aspect ratio of at least one of the features of the plurality of features to be imaged on the substrate by positioning a sub-resolution assist feature proximate to the corresponding mask feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.