Semiconductor device and a manufacturing method of the same
US7514294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jan 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.