Robust shallow trench isolation structures and a method for forming shallow trench isolation structures
US7514336B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 29, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jan 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor substrate, a shallow trench isolation structure having a dielectric material disposed in voids of a trench-fill material and a method for forming the shallow trench isolation structure. The voids may be formed during a wet clean process after the dielectric material is formed in the trench. A conformal silicon nitride layer is formed over the substrate and in the voids. After removal of the silicon nitride layer, the voids are at least partially filled by the silicon nitride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.