Methods for forming shallow trench isolation
US7514366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jan 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a silicon nitride barrier is deposited into the trench. The silicon nitride layer has a high nitrogen content near the trench walls to protect the walls. The silicon nitride layer further from the trench walls has a low nitrogen content and a high silicon content, to allow improved adhesion. The trench is then filled with a spin-on precursor. A densification or reaction process is then applied to convert the spin-on material into an insulator. The resulting trench has a well-adhered insulator which helps the insulating properties of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.