Epitaxial growth of relaxed silicon germanium layers
US7514372B2 · kind B2 · utility
8Cited by
14References
46Claims
0Family size
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Key dates
| Filing date | Jul 23, 2004 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jan 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 107 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.