Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
US7514373B2 · kind B2 · utility
12Cited by
5References
33Claims
0Family size
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Key dates
| Filing date | May 31, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Apr 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for forming a nitrided gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via a smooth-varying modulated RF power source to reduce electron temperature spike. Field effect transistor channel mobility and gate leakage current results are improved when the power source is smooth-varying modulated, as compared to square-wave modulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.