Power semiconductor device
US7514778B2 · kind B2 · utility
9Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Sep 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/2076
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device is disclosed. In one embodiment, the power semiconductor device includes a plurality of device components that are contact-connected by bonding wires having different thicknesses. The surface of at least one bonding wire serves as a contact area for at least one further bonding wire, the bonding wire that serves as contact area being thicker than the bonding wire contact-connected thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.