Non-volatile memory device and method of programming the same
US7515477B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2007 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | May 21, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device comprises an even bit line and an odd bit line contacting to a memory cell array. A register unit includes a first register and a second register for temporarily storing data. A detecting node detects a voltage level of the specific bit line or the specific register which is connected to the bit lines and the registers. A selecting unit of the bit line includes a first variable voltage input terminal and a second variable voltage input terminal. The first variable voltage input terminal applies a first variable voltage of a specific voltage level to the even bit line in response to an even discharge signal. The second variable voltage input terminal applies a second variable voltage of a specific voltage level to the odd bit line in response to an odd discharge signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.