Method and apparatus for heat processing of substrate
US7517217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Jun 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature. By temporarily increasing the temperature of the substrate to the intermediate temperature lower than the reaction temperature, maintaining the substrate at this intermediate temperature for the predetermined period of time, and thereafter increasing the temperature of the substrate to the high temperature higher than the reaction temperature when the temperature of the substrate is increased, the temperature within the surface of the substrate can be made uniform when the temperature of the substrate reaches the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.