Area diode formation in SOI application
US7517742B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Jun 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor stack is provided which includes a semiconductor substrate, a first semiconductor layer, and a first dielectric layer disposed between the substrate and the first semiconductor layer. A first trench is formed in the first dielectric layer which exposes a portion of the substrate, and a first implant region is formed in the first trench. Cathode and anode regions are formed in the first implant region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.