Inventor · Hopewell Junction, NY, US

Laegu Kang

19Patents
6h-index
40Co-inventors
66Inventor score

Filing activity: Mar 8, 1990 → Oct 24, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US6724048B2 Body-tied silicon on insulator semiconductor device and method therefor Electricity 22 Expired
US6620656B2 Method of forming body-tied silicon on insulator semiconductor device Electricity 18 Expired
US8809178B2 Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents Electricity 12 Active
US7186596B2 Vertical diode formation in SOI application Electricity 8 Expired
US5068200A Method of manufacturing DRAM cell Electricity 7 Expired
US8445969B2 High pressure deuterium treatment for semiconductor/high-K insulator interface Electricity 7 Active
US7528078B2 Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer Electricity 6 Active
US9099525B2 Blanket EPI super steep retrograde well formation without Si recess Electricity 3 Active
US8790972B2 Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatment Electricity 2 Active
US8916442B2 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device Electricity 1 Active
US7126172B2 Integration of multiple gate dielectrics by surface protection Electricity 1 Expired
US7517742B2 Area diode formation in SOI application Electricity 1 Active
US8106462B2 Balancing NFET and PFET performance using straining layers Electricity 0 Active
US10483172B2 Transistor device structures with retrograde wells in CMOS applications Electricity 0 Active
US9852954B2 Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures Electricity 0 Active
US9209181B2 Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures Electricity 0 Active
US7795089B2 Forming a semiconductor device having epitaxially grown source and drain regions Electricity 0 Active
US9362357B2 Blanket EPI super steep retrograde well formation without Si recess Electricity 0 Active
US9099380B2 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.