Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase

US7517782B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Axel Preusse · Radebeul, DE
• Susanne Wehner · Villmar, DE
• Markus Nopper · Dresden, DE

Key dates

• Filing date: Sep 28, 2006
• Grant date: Apr 14, 2009
• Expiry date: Mar 2, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.