Method and system for forming a nitrided germanium-containing layer using plasma processing
US7517812B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 31, 2005 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Sep 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.