Semiconductor component and method of manufacturing
US7518185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2007 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | May 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.