Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress
US7520171B2 · kind B2 · utility
15Cited by
8References
36Claims
0Family size
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Key dates
| Filing date | Sep 14, 2005 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/082
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.