Method for selective removal of a layer

US7521314B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Dharmesh Jawarani · Round Rock, US
• Konstantin V. Loiko · Austin, US
• Andrew G. Nagy · Austin, US

Key dates

• Filing date: Apr 20, 2007
• Grant date: Apr 21, 2009
• Expiry date: Sep 18, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

A method for forming a semiconductor device includes forming a liner over a semiconductor material including a control electrode. The method further includes forming a first spacer adjacent to the control electrode, wherein the first spacer has a first width. The method further includes implanting current electrode dopants. The method further includes removing the first spacer. The method further includes forming a second spacer adjacent the control electrode, wherein the second spacer has a second width and wherein the second width is less than the first width. The method further includes using the second spacer as a protective mask to selectively remove the liner. The method further includes forming a stressor layer overlying the control electrode and current electrode regions.