Method of fabricating a non-volatile semiconductor memory device
US7521321B2 · kind B2 · utility
2Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Nov 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
The present invention relates to a memory device and a method of fabricating the same. The memory device comprises a substrate, a tunnel dielectric film on the substrate, pairs of source and drain regions formed in the substrate, and a number of separate storage blocks between each pair of the source and drain regions. Each storage wire block includes a storage medium and a silicon dioxide layer. Two storage blocks are separated by an interval of at least 100 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.