Method for manufacturing a semiconductor device
US7521352B2 · kind B2 · utility
1Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2007 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Apr 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a copper anti-diffusion film on a copper trench wiring layer, and forming an opening portion in the copper anti-diffusion film by laser ablation, the opening portion being formed in a region corresponding to an alignment region used for lithography process for forming an aluminum wiring on the copper trench wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.