Method for manufacturing semiconductor device
US7521368B2 · kind B2 · utility
25Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2005 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Sep 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.