Measuring a process parameter of a semiconductor fabrication process using optical metrology
US7522294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2008 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Feb 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.