Patent · US Expired

Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device

US7522444B2 · kind B2 · utility

0Cited by

6References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Corvin Liaw · Birkenfeld, DE
Heinz Hoenigschmid · Starnberg, DE
Rainer Bruchhaus · Yokohama, JP

Key dates

Filing date	Mar 13, 2006
Grant date	Apr 21, 2009
Priority date	—
Expiry date	May 24, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present invention is related to a memory circuit comprising: a resistive memory element comprising a programmable metallization cell, a bit line, a selection transistor operable to address the resistive memory element for coupling the resistive memory element to the bit line, and a further transistor coupled with the resistive memory element for applying a predefined potential at a node between the selection transistor and the resistive memory element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.