Method for improved lithographic patterning utilizing optimized illumination conditions and high transmission attenuated PSM
US7523438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2005 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Jul 8, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70591
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.