Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device
US7524741B2 · kind B2 · utility
3Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | Mar 31, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Mar 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.