Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program
US7524774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Jun 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to prevent an increase in film thickness and inhibit a reduction in capacity of a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, an upper electrode, and an insulating film interposed between the lower electrode and the upper electrode. A surface of the lower electrode on an insulating layer side is nitrided. If the lower electrode is made of polysilicon, nitriding the surface thereof increases oxidation resistance at the time of heat treatment in a post process. Particularly in a DRAM, the capacity of the capacitor is large, and therefore, this effect is significant. Further, leakage current inside the capacitor is also reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.