Method for producing a dielectric layer for an electronic component

US7524775B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Henrik Ewe · Burglengenfeld, DE
• Karl Weidner · Birkenfeld, DE

Key dates

• Filing date: Jul 13, 2006
• Grant date: Apr 28, 2009
• Expiry date: Jul 9, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a dielectric layer extending between two or more elements of an electronic component includes arranging a free-standing dielectric layer above the elements and a deformable support layer below the elements. The free-standing dielectric layer is laminated onto at least a portion of the first surface of the first element and onto at least a portion of the first surface of the second element such that a portion of the dielectric layer extends between the first surface of the first element and the first surface of the second element.