High repetition rate laser produced plasma EUV light source
US7525111B2 · kind B2 · utility
8Cited by
64References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 20, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Aug 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0084
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
An EUV light source and method include a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of a target ignition site to confine the plasma to the vicinity of the target ignition site, which is controlled using outputs from a target tacking system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.